Highlights

Interfacial Dzyaloshinskii-Moriya Interaction in Pt/CoFeB Films: Effect of the Heavy-Metal Thickness

Dzyaloshinskii-Moriya interaction (DMI), i.e., the antisymmetric exchange interaction, is the subject of intense research due to its capability to induce the formation of chiral spin textures, such as magnetic Skyrmion lattices and spin spirals. In ultrathin ferromagnetic (FM) films in contact with a nonmagnetic heavy metal (HM), a noticeable interfacial DMI can arise due to the large spin-orbit coupling in the presence of the broken inversion symmetry at the FM/HM interface, leading to an asymmetric spin-wave dispersion.

A living bio-hybrid system studied by means of a multidisciplinary approach

A multidisciplinary approach to study the functional properties of neuron-like cell models constituting a living bio-hybrid system: SH-SY5Y cells adhering to PANI substrate

One of the more challenging aspects in cognitive or in rehabilitation neurosciences is the design of functional hybrid systems able to mimic the brain functionality, to connect and to exchange information between biological materials, like brain or neurons, and man-made electronic devices.

Snell's law for spin waves

Snell’s law describes the refraction of waves at the transition between two media with different indices of refraction. In optics, the dispersion relation of light is isotropic, and thus, the relation between the incident and refracted angles is solely determined by the ratio of the refractive indices. In contrast, for spin waves in thin films with in-plane magnetization the dispersion relation is inherently anisotropic, and thus, deviations from the Snell’s law in optics are expected but have not been reported directly so far.

A Roadmap for Controlled and Efficient n-type Doping of Self-assisted GaAs Nanowires Grown by Molecular Beam Epitaxy

N-type doping of GaAs nanowires has proven to be difficult because the amphoteric character of silicon impurities, routinely used for the n-type doping of GaAs epilayers,  is enhanced by the nanowire growth mechanism and growth conditions. Among the various possible donor impurities for GaAs NWs, tellurium represents a good candidate since it is a very effective dopant in GaAs epilayers and does not present any risk of amphoteric behavior.

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