Highlights

Interface Functionalities in Multilayer Stack OLETs

Herein is described a multidisciplinary approach to understand the performance limitations of small molecule organic light emitting transistors (OLETs) based on a layered architecture, an innovative architecture potentially competitive with the state of the art and more flexible for spectral emission control.

Non-contact mechanical and chemical analysis of single living cells by microspectroscopic techniques

A non-contact method that combines two microspectroscopic techniques can perform mechanical and chemical analysis of single living cells. These properties are intimately connected and assures the correct functionality of cells and tissues: their imbalances can be symptoms and effects of pathologies. Current measurements of cell mechanics require physical contact or they lack in spatial resolution.

Electric control of magnetism at the Fe/BaTiO3 interface

Using electric fields for magnetic writing is a very appealing opportunity, however, bulk multiferroic materials at room temperature have not been yet found. Instead, interfacial magnetoelectric coupling could be a viable path to achieve electrical writing of magnetic information in spintronic devices.


Here, we report on a room temperature ON-OFF electrical switching of the interfacial magnetization at the Fe/BaTiO3 interface.

The resistive switching mechanism of CBRAM clarified by using synchrotron characterizations

In  recent  years,  resistive  random  access  memories  have  received  extensive  interest  for applications  as  non-volatile  memories  or  neuromorphic  computing.  Conductive  Bridging Random Access Memories (CBRAM) based on a glassy Ag-GeSx  layer sandwiched between an  Ag  anode  and  an  inert  W  cathode  are  considered  to  be  one  of  the  most  promising technologies. Under the influence of an electric field Ag ions are produced at the anode and migrate in the electrolyte reaching the cathode and forming a conducting wire. This process is reversible by applying a bias with opposite polarity. However, the lack of understanding of the  switching  mechanisms  at  a  nanoscale  level  prevents  the  successful  transfer  of  this technology to the industry. CBRAM devices were characterized in their different resistive states using depth-selective X-Ray Absorption Spectroscopy (XAS) at the GILDA-CRG beamline at the ESRF in Grenoble.

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